https://wiki.cern.ch/index.php?action=history&feed=atom&title=SiCSiC - Revision history2026-04-05T22:21:38ZRevision history for this page on the wikiMediaWiki 1.44.0https://wiki.cern.ch/index.php?title=SiC&diff=8535&oldid=prevVigen at 14:39, 24 March 20262026-03-24T14:39:46Z<p></p>
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<td colspan="2" style="background-color: #fff; color: #202122; text-align: center;">Revision as of 14:39, 24 March 2026</td>
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<tr><td class="diff-marker"></td><td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>'''Silicon carbide''' ('''SiC''') devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow devices to be created which by far outperform the corresponding Si ones. This way previously unattainable efficiency levels can be achieved.</div></td><td class="diff-marker"></td><td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>'''Silicon carbide''' ('''SiC''') devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow devices to be created which by far outperform the corresponding Si ones. This way previously unattainable efficiency levels can be achieved.</div></td></tr>
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</table>Vigenhttps://wiki.cern.ch/index.php?title=SiC&diff=7659&oldid=prevVigen: Created page with "'''Silicon carbide''' ('''SiC''') devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow devices to be created which by far outperform the corresponding Si ones. This way previously unattainable efficiency levels can be achieved. Cate..."2026-02-16T18:19:05Z<p>Created page with "'''Silicon carbide''' ('''SiC''') devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow devices to be created which by far outperform the corresponding Si ones. This way previously unattainable efficiency levels can be achieved. Cate..."</p>
<p><b>New page</b></p><div>'''Silicon carbide''' ('''SiC''') devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow devices to be created which by far outperform the corresponding Si ones. This way previously unattainable efficiency levels can be achieved.<br />
[[Category:Abbreviations]]</div>Vigen