SiC: Difference between revisions
Created page with "'''Silicon carbide''' ('''SiC''') devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow devices to be created which by far outperform the corresponding Si ones. This way previously unattainable efficiency levels can be achieved. Cate..." |
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'''Silicon carbide''' ('''SiC''') devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow devices to be created which by far outperform the corresponding Si ones. This way previously unattainable efficiency levels can be achieved. | '''Silicon carbide''' ('''SiC''') devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow devices to be created which by far outperform the corresponding Si ones. This way previously unattainable efficiency levels can be achieved. | ||
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Latest revision as of 14:39, 24 March 2026
Silicon carbide (SiC) devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow devices to be created which by far outperform the corresponding Si ones. This way previously unattainable efficiency levels can be achieved.