DRAM: Difference between revisions
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'''Dynamic random-access memory''' (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. | '''Dynamic random-access memory''' (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. | ||
For more information, see [[wikipedia:Dynamic random-access memory|Wikipedia]]. [[Category:Abbreviations]] | |||
[[Category:Computer hardware]] | [[Category:Computer hardware]] | ||
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Latest revision as of 10:03, 30 March 2026
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.
For more information, see Wikipedia.